FDMC7572S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

January 2010FDMC7572SN-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 mFeatures General Description Max rDS(on) = 3.15 m at VGS = 10 V, ID = 22.5 AThe FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowe

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

December 2009FDMC7570SN-Channel Power Trench SyncFETTM 25 V, 40 A, 2 mFeatures General DescriptionThe FDMC7570S has been designed to minimize losses in Max rDS(on) = 2 m at VGS = 10 V, ID = 27 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.9 m at VGS = 4.5 V, ID = 21.5 Apackage technologies have been combined to offer the lowest

FDMC7570SMOSFET N-Channel,POWERTRENCH),SyncFETt25 V, 40 A, 2 mWwww.onsemi.comGeneral DescriptionThe FDMC7570S has been designed to minimize losses in powerPin 1conversion application. Advancements in both silicon and packagetechnologies have been combined to offer the lowest RDS(on) whilemaintaining excellent switching performance. This device has theadded benefit of

April 2012FDMC7582N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mFeatures General Description Max rDS(on) = 5.0 m at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 7.5 m at VGS = 4.5 V, ID = 13.6 Aringing of DC/DC converters using either synchronous or State-of-th