FDMC7572S - описание и поиск аналогов

January 2010 FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 m Features General Description Max rDS(on) = 3.15 m at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7 m at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowe

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

December 2009 FDMC7570S N-Channel Power Trench SyncFETTM 25 V, 40 A, 2 m Features General Description The FDMC7570S has been designed to minimize losses in Max rDS(on) = 2 m at VGS = 10 V, ID = 27 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.9 m at VGS = 4.5 V, ID = 21.5 A package technologies have been combined to offer the lowest

FDMC7570S MOSFET N-Channel, POWERTRENCH), SyncFETt 25 V, 40 A, 2 mW www.onsemi.com General Description The FDMC7570S has been designed to minimize losses in power Pin 1 conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of

April 2012 FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 m Features General Description Max rDS(on) = 5.0 m at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 7.5 m at VGS = 4.5 V, ID = 13.6 A ringing of DC/DC converters using either synchronous or State-of-th