HM4853 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM4853 datasheet

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hm4853.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON)

0.1. Size:562K cn hmsemi
hm4853b.pdf pdf_icon

HM4853B P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -12V,ID = -8A RDS(ON)

0.2. Size:604K cn hmsemi
hm4853a.pdf pdf_icon

HM4853A P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The HM4853A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RS(ON)

Otros transistores... HM4822B , HM4826 , HM4826A , HM4828 , HM4828A , HM4830 , HM4840 , HM4843 , EMB04N03H , HM4853A , HM4853B , HM4884 , HM4884A , HM4885 , HM4885A , HM4886A , HM4886E .