HM4853 Datasheet and Replacement. Cross Reference Search

HM4853 Datasheet (PDF)

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P-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON)

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HM4853BP-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -12V,ID = -8A RDS(ON)

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HM4853AP-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The HM4853A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .