HM4853 Datasheet. Specs and Replacement

Type Designator: HM4853  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 498 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

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HM4853 datasheet

 ..1. Size:524K  cn hmsemi
 hm4853.pdf pdf_icon

HM4853

P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON) ... See More ⇒

 0.1. Size:562K  cn hmsemi
 hm4853b.pdf pdf_icon

HM4853

HM4853B P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -12V,ID = -8A RDS(ON) ... See More ⇒

 0.2. Size:604K  cn hmsemi
 hm4853a.pdf pdf_icon

HM4853

HM4853A P-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The HM4853A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RS(ON) ... See More ⇒

Detailed specifications: HM4822B, HM4826, HM4826A, HM4828, HM4828A, HM4830, HM4840, HM4843, AO4407, HM4853A, HM4853B, HM4884, HM4884A, HM4885, HM4885A, HM4886A, HM4886E

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