HM4884 Todos los transistores

 

HM4884 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4884
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

HM4884 Datasheet (PDF)

 ..1. Size:577K  cn hmsemi
hm4884.pdf pdf_icon

HM4884

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)

 0.1. Size:636K  cn hmsemi
hm4884a.pdf pdf_icon

HM4884

HM4884A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =40V,ID =15A RDS(ON)

 9.1. Size:797K  cn hmsemi
hm4885.pdf pdf_icon

HM4884

HM4885Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)

 9.2. Size:968K  cn hmsemi
hm4885a.pdf pdf_icon

HM4884

HM4885ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SWF2N70D | WM02N08L | HGN035N08AL | CP650

 

 
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