HM4884 Specs and Replacement
Type Designator: HM4884
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP8
HM4884 substitution
- MOSFET ⓘ Cross-Reference Search
HM4884 datasheet
hm4884.pdf
HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON) ... See More ⇒
hm4884a.pdf
HM4884A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =40V,ID =15A RDS(ON) ... See More ⇒
hm4885.pdf
HM4885 Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2 switch or in PWM applications. S1 S2 General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON) ... See More ⇒
hm4885a.pdf
HM4885A Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2 switch or in PWM applications. S1 S2 General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON) ... See More ⇒
Detailed specifications: HM4828, HM4828A, HM4830, HM4840, HM4843, HM4853, HM4853A, HM4853B, AOD4184A, HM4884A, HM4885, HM4885A, HM4886A, HM4886E, HM4887, HM4892A, HM4892B
Keywords - HM4884 MOSFET specs
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