HM4884A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM4884A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 29 nC
Tiempo de subida (tr): 17.2 nS
Conductancia de drenaje-sustrato (Cd): 280 pF
Resistencia entre drenaje y fuente RDS(on): 0.013 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET HM4884A
HM4884A Datasheet (PDF)
hm4884a.pdf
HM4884A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =40V,ID =15A RDS(ON)
hm4884.pdf
HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)
hm4885.pdf
HM4885Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)
hm4885a.pdf
HM4885ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)
hm4886e.pdf
HM4886E 100VDS20VGS3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low
hm4887.pdf
HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and D1D2design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G1 G2General Features S1 S2 VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)
hm4886a.pdf
HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A Schematic diagram RDS(ON)
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
