HM4885A Todos los transistores

 

HM4885A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4885A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SOP8
     - Selección de transistores por parámetros

 

HM4885A Datasheet (PDF)

 ..1. Size:968K  cn hmsemi
hm4885a.pdf pdf_icon

HM4885A

HM4885ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)

 8.1. Size:797K  cn hmsemi
hm4885.pdf pdf_icon

HM4885A

HM4885Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)

 9.1. Size:577K  cn hmsemi
hm4884.pdf pdf_icon

HM4885A

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)

 9.2. Size:830K  cn hmsemi
hm4886e.pdf pdf_icon

HM4885A

HM4886E 100VDS20VGS3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

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History: VS4020AP | 2N7075

 

 
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