All MOSFET. HM4885A Datasheet

 

HM4885A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4885A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8

 HM4885A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4885A Datasheet (PDF)

 ..1. Size:968K  cn hmsemi
 hm4885a.pdf

HM4885A HM4885A

HM4885ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)

 8.1. Size:797K  cn hmsemi
 hm4885.pdf

HM4885A HM4885A

HM4885Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)

 9.1. Size:577K  cn hmsemi
 hm4884.pdf

HM4885A HM4885A

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)

 9.2. Size:830K  cn hmsemi
 hm4886e.pdf

HM4885A HM4885A

HM4886E 100VDS20VGS3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

 9.3. Size:636K  cn hmsemi
 hm4884a.pdf

HM4885A HM4885A

HM4884A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =40V,ID =15A RDS(ON)

 9.4. Size:775K  cn hmsemi
 hm4887.pdf

HM4885A HM4885A

HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and D1D2design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G1 G2General Features S1 S2 VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

 9.5. Size:578K  cn hmsemi
 hm4886a.pdf

HM4885A HM4885A

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A Schematic diagram RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top