HM4885A Datasheet and Replacement
Type Designator: HM4885A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
HM4885A substitution
HM4885A Datasheet (PDF)
hm4885a.pdf

HM4885ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)
hm4885.pdf

HM4885Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)
hm4884.pdf

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)
hm4886e.pdf

HM4886E 100VDS20VGS3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low
Datasheet: HM4840 , HM4843 , HM4853 , HM4853A , HM4853B , HM4884 , HM4884A , HM4885 , 5N50 , HM4886A , HM4886E , HM4887 , HM4892A , HM4892B , HM4922 , HM4953 , HM4953A .
History: BUK664R4-55C | VBZE30N02
Keywords - HM4885A MOSFET datasheet
HM4885A cross reference
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History: BUK664R4-55C | VBZE30N02



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