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HM4887 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4887
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOP8
 

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HM4887 Datasheet (PDF)

 ..1. Size:775K  cn hmsemi
hm4887.pdf pdf_icon

HM4887

HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and D1D2design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G1 G2General Features S1 S2 VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

 9.1. Size:797K  cn hmsemi
hm4885.pdf pdf_icon

HM4887

HM4885Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)

 9.2. Size:577K  cn hmsemi
hm4884.pdf pdf_icon

HM4887

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)

 9.3. Size:968K  cn hmsemi
hm4885a.pdf pdf_icon

HM4887

HM4885ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)

Otros transistores... HM4853A , HM4853B , HM4884 , HM4884A , HM4885 , HM4885A , HM4886A , HM4886E , IRFZ44N , HM4892A , HM4892B , HM4922 , HM4953 , HM4953A , HM4953B , HM4953C , HM4953D .

History: SI4172DY | SI3456CDV | BUK654R8-40C | SI3456DDV | BSZ035N03MS

 

 
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