HM4887 - описание и поиск аналогов

HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and D1 D2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G1 G2 General Features S1 S2 VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

HM4885 Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2 switch or in PWM applications. S1 S2 General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)

HM4885A Dual P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2 switch or in PWM applications. S1 S2 General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)

HM4886E 100VDS 20VGS 3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=3.5A Pin Description RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=175m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

HM4884A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =40V,ID =15A RDS(ON)

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A Schematic diagram RDS(ON)