Справочник MOSFET. HM4887

 

HM4887 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM4887
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 590 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для HM4887

 

 

HM4887 Datasheet (PDF)

 ..1. Size:775K  cn hmsemi
 hm4887.pdf

HM4887 HM4887

HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and D1D2design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G1 G2General Features S1 S2 VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

 9.1. Size:797K  cn hmsemi
 hm4885.pdf

HM4887 HM4887

HM4885Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -7.5A RDS(ON)

 9.2. Size:577K  cn hmsemi
 hm4884.pdf

HM4887 HM4887

HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES Schematic diagram VDS =40V,ID =10A RDS(ON)

 9.3. Size:968K  cn hmsemi
 hm4885a.pdf

HM4887 HM4887

HM4885ADual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4885A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G1 G2switch or in PWM applications. S1 S2General Features Schematic diagram VDS = -40V,ID = -13A RDS(ON)

 9.4. Size:830K  cn hmsemi
 hm4886e.pdf

HM4887 HM4887

HM4886E 100VDS20VGS3.5A(ID) Dual N-Channel Enha ncement Mode MOSFET Features VDSS=100VVGSS=20VID=3.5A Pin Description RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

 9.5. Size:636K  cn hmsemi
 hm4884a.pdf

HM4887 HM4887

HM4884A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =40V,ID =15A RDS(ON)

 9.6. Size:578K  cn hmsemi
 hm4886a.pdf

HM4887 HM4887

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A Schematic diagram RDS(ON)

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