HM4892A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM4892A Datasheet (PDF)

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HM4892A 100VDS20VGS6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Features VDSS=100VVGSS=20VID=6.5A RDS(ON)=37m(max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Low On-Resistance Schematic diagram Applications Power Management in Inverter System Boost for LED Backlight H

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CHENMKO ENTERPRISE CO.,LTDCHM4892JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

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hm4892b.pdf pdf_icon

HM4892BFeatures Package DimensionsLow On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 100 VDSSGate-to-Source Voltage V +20 VGSSDrain Current (DC) I 8 ADDrain Current (Pulse) I PW10uS, duty cycle1% 32 ADPAllowable Power Dissipation P Mounted on

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .