HM4892A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM4892A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de HM4892A MOSFET
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HM4892A datasheet
hm4892a.pdf
HM4892A 100VDS 20VGS 6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Features VDSS=100V VGSS= 20V ID=6.5A RDS(ON)=37m (max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Low On-Resistance Schematic diagram Applications Power Management in Inverter System Boost for LED Backlight H
chm4892jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM4892JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power
hm4892b.pdf
HM4892B Features Package Dimensions Low On resistance. 4.5V drive. RoHS compliant. Specifications Absolute Maximum Ratings at T =250C a Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 100 V DSS Gate-to-Source Voltage V +20 V GSS Drain Current (DC) I 8 A D Drain Current (Pulse) I PW 10uS, duty cycle 1% 32 A DP Allowable Power Dissipation P Mounted on
Otros transistores... HM4853B , HM4884 , HM4884A , HM4885 , HM4885A , HM4886A , HM4886E , HM4887 , IRF3205 , HM4892B , HM4922 , HM4953 , HM4953A , HM4953B , HM4953C , HM4953D , HM4963 .
History: CHM4435AZGP | HM4892B
History: CHM4435AZGP | HM4892B
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