HM4892B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM4892B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.7 V
Tiempo de subida (tr): 3 nS
Conductancia de drenaje-sustrato (Cd): 95 pF
Resistencia entre drenaje y fuente RDS(on): 0.032 Ohm
Paquete / Cubierta: SOP8
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HM4892B Datasheet (PDF)
hm4892b.pdf
HM4892BFeatures Package DimensionsLow On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 100 VDSSGate-to-Source Voltage V +20 VGSSDrain Current (DC) I 8 ADDrain Current (Pulse) I PW10uS, duty cycle1% 32 ADPAllowable Power Dissipation P Mounted on
chm4892jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM4892JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
hm4892a.pdf
HM4892A 100VDS20VGS6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Features VDSS=100VVGSS=20VID=6.5A RDS(ON)=37m(max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Low On-Resistance Schematic diagram Applications Power Management in Inverter System Boost for LED Backlight H
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