HM4892B MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4892B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOP8
HM4892B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4892B Datasheet (PDF)
hm4892b.pdf
HM4892BFeatures Package DimensionsLow On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 100 VDSSGate-to-Source Voltage V +20 VGSSDrain Current (DC) I 8 ADDrain Current (Pulse) I PW10uS, duty cycle1% 32 ADPAllowable Power Dissipation P Mounted on
chm4892jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM4892JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
hm4892a.pdf
HM4892A 100VDS20VGS6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Features VDSS=100VVGSS=20VID=6.5A RDS(ON)=37m(max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Low On-Resistance Schematic diagram Applications Power Management in Inverter System Boost for LED Backlight H
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
