HM4892B
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4892B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 95
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
SOP8
HM4892B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4892B
Datasheet (PDF)
..1. Size:567K cn hmsemi
hm4892b.pdf
HM4892BFeatures Package DimensionsLow On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 100 VDSSGate-to-Source Voltage V +20 VGSSDrain Current (DC) I 8 ADDrain Current (Pulse) I PW10uS, duty cycle1% 32 ADPAllowable Power Dissipation P Mounted on
8.1. Size:342K chenmko
chm4892jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM4892JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
8.2. Size:1047K cn hmsemi
hm4892a.pdf
HM4892A 100VDS20VGS6.5A(ID) Dual N-Channel Enhancement Mode MOSFET Features VDSS=100VVGSS=20VID=6.5A RDS(ON)=37m(max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Low On-Resistance Schematic diagram Applications Power Management in Inverter System Boost for LED Backlight H
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