HM4953 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM4953 Datasheet (PDF)

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hm4953.pdf pdf_icon

HM4953Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)

0.1. Size:83K chenmko
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CHENMKO ENTERPRISE CO.,LTDCHM4953JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

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hm4953c.pdf pdf_icon

HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON)

0.3. Size:763K cn hmsemi
hm4953b.pdf pdf_icon

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)