HM4953
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4953
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 420
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOP8
HM4953
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4953
Datasheet (PDF)
..1. Size:454K cn hmsemi
hm4953.pdf
HM4953Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)
0.1. Size:83K chenmko
chm4953jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM4953JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High
0.2. Size:625K cn hmsemi
hm4953c.pdf
HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON)
0.3. Size:763K cn hmsemi
hm4953b.pdf
HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)
0.4. Size:579K cn hmsemi
hm4953a.pdf
HM4953ADual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON)
0.5. Size:2783K cn hmsemi
hm4953d.pdf
Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com Shenzhen H&M Semiconductor Co.Ltd http//www.hmsemi.com
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