HM4953 PDF and Equivalents Search

 

HM4953 Specs and Replacement

Type Designator: HM4953

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOP8

HM4953 substitution

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HM4953 datasheet

 ..1. Size:454K  cn hmsemi
hm4953.pdf pdf_icon

HM4953

HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.1A RDS(ON) ... See More ⇒

 0.1. Size:83K  chenmko
chm4953jgp.pdf pdf_icon

HM4953

CHENMKO ENTERPRISE CO.,LTD CHM4953JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High ... See More ⇒

 0.2. Size:625K  cn hmsemi
hm4953c.pdf pdf_icon

HM4953

HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -27V,ID = -5A RDS(ON) ... See More ⇒

 0.3. Size:763K  cn hmsemi
hm4953b.pdf pdf_icon

HM4953

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON) ... See More ⇒

Detailed specifications: HM4885, HM4885A, HM4886A, HM4886E, HM4887, HM4892A, HM4892B, HM4922, 20N60, HM4953A, HM4953B, HM4953C, HM4953D, HM4963, HM4N10PR, HM4N150T, HM4N60

Keywords - HM4953 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


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