HM50P02K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM50P02K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 450 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de HM50P02K MOSFET
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HM50P02K datasheet
hm50p02k.pdf
HM50P02K P-Channel Enhancement Mode Power MOSFET D Description The HM50P02K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -50A RDS(ON)
hm50p03k.pdf
HM50P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM50P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -50A D S RDS(ON)
hm50p03.pdf
HM50P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM50P03 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -50A D S RDS(ON)
hm50p06k.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)
Otros transistores... HM50N06KA, HM50N08, HM50N08K, HM50N10K, HM50N15, HM50N15D, HM50N20, HM50N20D, SPP20N60C3, HM50P03, HM50P03D, HM50P03K, HM50P06, HM50P06K, HM530, HM55N03D, HM5853
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