STS2306A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STS2306A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOT23

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STS2306A datasheet

 ..1. Size:139K  samhop
 sts2306a.pdf pdf_icon

STS2306A

Green Product S TS 2306A S amHop Microelectronics C orp. Apr. 27 2010 Ver1.1 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 40 @ VG S = 4.5V 20V 4.5A S urface Mount Package. 50 @ VG S = 2.5V E S D Protected. D SOT-23-3L G S ABS OLUTE MA

 7.1. Size:136K  samhop
 sts2306e.pdf pdf_icon

STS2306A

Green Product S TS 2306E S amHop Microelectronics C orp. J an. 10 2008 Ver1.0 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 30 @ VG S = 4.5V 20V 6.5A S urface Mount Package. 40 @ VG S = 2.5V E S D Protected. D S OT-23 G S ABS OLUTE MAX

 7.2. Size:134K  samhop
 sts2306.pdf pdf_icon

STS2306A

Green Product S TS 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 45 @ VG S = 4.5V 20V 2.8A S OT-23 package. 60 @ VG S =2.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless o

 7.3. Size:879K  cn vbsemi
 sts2306.pdf pdf_icon

STS2306A

STS2306 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C

MOSTRAR MÁS

Otros transistores... FDMC6890NZ, FDMC7570S, FDMC7572S, FDMC7660, STS2307, STS2306E, FDMC7660DC, FDMC7660S, IRF830, FDMC7664, STS2306, FDMC7672, STS2305A, FDMC7672S, STS2305, FDMC7678, STS2302A