HM5N60 Todos los transistores

 

HM5N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM5N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

HM5N60 Datasheet (PDF)

 ..1. Size:1319K  cn hmsemi
 hm5n60.pdf pdf_icon

HM5N60

N RN-CHANNEL MOSFET HM5N60 Package MAIN CHARACTERISTICS .0 A ID 5600 V VDSS Rdson 2.4 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 ..2. Size:383K  cn hmsemi
 hm5n60 hm5n60f.pdf pdf_icon

HM5N60

HM5N60 / HM5N60FHM5N60 / HM5N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching

 0.1. Size:675K  cn hmsemi
 hm5n60k hm5n60i.pdf pdf_icon

HM5N60

HM5N60K / HM5N60IHM5N60K / HM5N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 9.1. Size:443K  cn hmsemi
 hm5n65 hm5n65f.pdf pdf_icon

HM5N60

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switchi

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP98T03GP-HF | CSD85312Q3E | FTK5N80DD | BUK7616-55A

 

 
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