HM603BK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM603BK 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14.2 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Encapsulados: TO252-4L
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HM603BK datasheet
hm603bk.pdf
HM603BK DESCRIPTION The HM603BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,
chm6030lpagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM6030LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 40 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
chm6031lpagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM6031LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
chm603alpagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM603ALPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
Otros transistores... HM5N65, HM5N65F, HM5N65I, HM5N65K, HM5N90, HM5P55R, HM6005A, HM603AK, K4145, HM603K, HM607K, HM609BK, HM609K, HM60N02, HM60N02K, HM60N03, HM60N03D
Parámetros del MOSFET. Cómo se afectan entre sí.
History: APT7F100S | NDC631N
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