HM603BK Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HM603BK
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 34.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14.2 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm
Тип корпуса: TO252-4L
Аналог (замена) для HM603BK
HM603BK Datasheet (PDF)
hm603bk.pdf

HM603BKDESCRIPTION The HM603BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,
chm6030lpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6030LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 40 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm6031lpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6031LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm603alpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM603ALPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Другие MOSFET... HM5N65 , HM5N65F , HM5N65I , HM5N65K , HM5N90 , HM5P55R , HM6005A , HM603AK , IRFB31N20D , HM603K , HM607K , HM609BK , HM609K , HM60N02 , HM60N02K , HM60N03 , HM60N03D .
History: NCE70N380 | SVG103R0NKL | HY10P10D | FQD4N25TM | MPSD60M370 | HSU4004 | SPA04N50C3
History: NCE70N380 | SVG103R0NKL | HY10P10D | FQD4N25TM | MPSD60M370 | HSU4004 | SPA04N50C3



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