HM6400 Todos los transistores

 

HM6400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM6400
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 99 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: SOT23-6L
 

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HM6400 Datasheet (PDF)

 ..1. Size:734K  cn hmsemi
hm6400.pdf pdf_icon

HM6400

HM6400N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 6.9A Schematic diagram RDS(ON)

 9.1. Size:45K  chenmko
chm640ngp.pdf pdf_icon

HM6400

CHENMKO ENTERPRISE CO.,LTDCHM640NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.0

 9.2. Size:1006K  cn hmsemi
hm6409.pdf pdf_icon

HM6400

HM6409P-Channel Enhancement Mode Power MOSFET Description DThe HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON)

 9.3. Size:1121K  cn hmsemi
hm6408.pdf pdf_icon

HM6400

HM6408N-Channel Enhancement Mode Power MOSFET Description DThe HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON)

Otros transistores... HM60N06K , HM60N08 , HM60N10D , HM60N20 , HM60N20D , HM60N75K , HM610AK , HM640 , HY1906P , HM6401 , HM6408 , HM6409 , HM6602 , HM6604 , HM6620 , HM6800 , HM6801 .

History: UF830KG-TA3-T | APM4532 | FQP16N15

 

 
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