HM6400 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM6400
Маркировка: 6400
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.4 V
Максимально допустимый постоянный ток стока |Id|: 6.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.5 nC
Время нарастания (tr): 4.8 ns
Выходная емкость (Cd): 99 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.041 Ohm
Тип корпуса: SOT23-6L
HM6400 Datasheet (PDF)
hm6400.pdf
HM6400N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 6.9A Schematic diagram RDS(ON)
chm640ngp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM640NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.0
hm6409.pdf
HM6409P-Channel Enhancement Mode Power MOSFET Description DThe HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON)
hm6408.pdf
HM6408N-Channel Enhancement Mode Power MOSFET Description DThe HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON)
hm640.pdf
HM640 General Description VDSS 200 V HM640, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
hm6401.pdf
HM6401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.0A RDS(ON)
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