HM6409 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM6409P-Channel Enhancement Mode Power MOSFET Description DThe HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON)

CHENMKO ENTERPRISE CO.,LTDCHM640NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.0

HM6408N-Channel Enhancement Mode Power MOSFET Description DThe HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON)

HM6400N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 6.9A Schematic diagram RDS(ON)

HM640 General Description VDSS 200 V HM640, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system

HM6401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.0A RDS(ON)