All MOSFET. HM6409 Datasheet

 

HM6409 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM6409
   Marking Code: 6409
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT23-6L

 HM6409 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM6409 Datasheet (PDF)

 ..1. Size:1006K  cn hmsemi
 hm6409.pdf

HM6409 HM6409

HM6409P-Channel Enhancement Mode Power MOSFET Description DThe HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON)

 9.1. Size:45K  chenmko
 chm640ngp.pdf

HM6409 HM6409

CHENMKO ENTERPRISE CO.,LTDCHM640NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.0

 9.2. Size:1121K  cn hmsemi
 hm6408.pdf

HM6409 HM6409

HM6408N-Channel Enhancement Mode Power MOSFET Description DThe HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON)

 9.3. Size:734K  cn hmsemi
 hm6400.pdf

HM6409 HM6409

HM6400N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 6.9A Schematic diagram RDS(ON)

 9.4. Size:930K  cn hmsemi
 hm640.pdf

HM6409 HM6409

HM640 General Description VDSS 200 V HM640, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system

 9.5. Size:759K  cn hmsemi
 hm6401.pdf

HM6409 HM6409

HM6401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -30V,ID = -5.0A RDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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