HM6602 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM6602
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.4 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 4.8 nS
   Conductancia de drenaje-sustrato (Cd): 99 pF
   Resistencia entre drenaje y fuente RDS(on): 0.058 Ohm
   Paquete / Cubierta: SOT23-6L

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HM6602 Datasheet (PDF)

..1. Size:1547K cn hmsemi
hm6602.pdf

HM6602N and P-Channel Enhancement Mode Power MOSFET Description D1 D2The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application.G1 G2S1 S2General Features N-channel P-channel N-Channel VDS = 30V,ID = 3.6A Schematic diagram RDS(ON)

9.1. Size:92K chenmko
chm6601jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6601JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

9.2. Size:73K chenmko
chm6601pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6601PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged a

9.3. Size:92K chenmko
chm6607jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6607JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

9.4. Size:783K cn hmsemi
hm6604.pdf

HM6604N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS = 20V,ID =3A RDS(ON)

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