HM6602 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM6602  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 99 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm

Encapsulados: SOT23-6L

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HM6602 datasheet

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HM6602

HM6602 N and P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application. G1 G2 S1 S2 General Features N-channel P-channel N-Channel VDS = 30V,ID = 3.6A Schematic diagram RDS(ON)

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HM6602

CHENMKO ENTERPRISE CO.,LTD CHM6601JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

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HM6602

CHENMKO ENTERPRISE CO.,LTD CHM6601PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * High density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Rugged a

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 chm6607jgp.pdf pdf_icon

HM6602

CHENMKO ENTERPRISE CO.,LTD CHM6607JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High

MOSTRAR MÁS

Otros transistores... HM60N20D, HM60N75K, HM610AK, HM640, HM6400, HM6401, HM6408, HM6409, 2SK2842, HM6604, HM6620, HM6800, HM6801, HM6803, HM6804, HM6804D, HM6N10