HM6602 - Даташиты. Аналоги. Основные параметры

HM6602 N and P-Channel Enhancement Mode Power MOSFET Description D1 D2 The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a Battery protection or in other Switching application. G1 G2 S1 S2 General Features N-channel P-channel N-Channel VDS = 30V,ID = 3.6A Schematic diagram RDS(ON)

CHENMKO ENTERPRISE CO.,LTD CHM6601JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

CHENMKO ENTERPRISE CO.,LTD CHM6601PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * High density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Rugged a

CHENMKO ENTERPRISE CO.,LTD CHM6607JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High

HM6604 N and P-Channel Enhancement Mode Power MOSFET Description The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS = 20V,ID =3A RDS(ON)