2SK2541 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2541
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.25 W
Voltaje máximo drenador - fuente |Vds|: 50 V
Voltaje máximo fuente - puerta |Vgs|: 7 V
Corriente continua de drenaje |Id|: 0.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 48 nS
Conductancia de drenaje-sustrato (Cd): 8 pF
Resistencia entre drenaje y fuente RDS(on): 15 Ohm
Paquete / Cubierta: SST
Búsqueda de reemplazo de MOSFET 2SK2541
2SK2541 Datasheet (PDF)
2sk2544.pdf
2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2544 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M
2sk2549.pdf
2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2549 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.29 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V
2sk2545.pdf
2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2545 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10
2sk2543.pdf
2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2543 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.75 (typ.) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMa
2sk2542.pdf
2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2542 Switching Regulator Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.75 (typ.) DS (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 500 V) DS Enhancement-mode : V = 2.0~4.0 V (V = 10 V, I
2sk2543.pdf
isc N-Channel MOSFET Transistor 2SK2543FEATURESStatic drain-source on-resistance:RDS(on) 0.85Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS
Otros transistores... 2SK2519-01 , 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , IRFP460 , 2SK2553 , 2SK2554 , 2SK2586 , 2SK2684 , 2SK2701 , 2SK2702 , 2SK2703 , 2SK2704 .
