2SK2541 Specs and Replacement

Type Designator: 2SK2541

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: SST

2SK2541 substitution

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2SK2541 datasheet

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2SK2541

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2SK2541

2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2544 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M... See More ⇒

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2SK2541

2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2549 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm 2.5 V gate drive Low drain-source ON resistance R = 0.29 (typ.) DS (ON) High forward transfer admittance Y = 3.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode V... See More ⇒

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2SK2541

2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2545 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Y = 5.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 ... See More ⇒

Detailed specifications: 2SK2519-01, 2SK2520-01MR, 2SK2521-01, 2SK2522-01MR, 2SK2523-01, 2SK2524-01MR, 2SK2525-01, 2SK2529, IRFZ44, 2SK2553, 2SK2554, 2SK2586, 2SK2684, 2SK2701, 2SK2702, 2SK2703, 2SK2704

Keywords - 2SK2541 MOSFET specs

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