HM6800 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM6800  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 99 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm

Encapsulados: SOT23-6L

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HM6800 datasheet

 ..1. Size:559K  cn hmsemi
 hm6800.pdf pdf_icon

HM6800

HM6800 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS

 9.1. Size:744K  cn hmsemi
 hm6803.pdf pdf_icon

HM6800

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D D The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.2. Size:307K  cn hmsemi
 hm6804d.pdf pdf_icon

HM6800

HM6804D Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

 9.3. Size:612K  cn hmsemi
 hm6804.pdf pdf_icon

HM6800

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

MOSTRAR MÁS

Otros transistores... HM640, HM6400, HM6401, HM6408, HM6409, HM6602, HM6604, HM6620, IRFZ44N, HM6801, HM6803, HM6804, HM6804D, HM6N10, HM6N10PR, HM6N10R, HM6N70