HM6800 Todos los transistores

 

HM6800 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM6800
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 99 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: SOT23-6L

 Búsqueda de reemplazo de MOSFET HM6800

 

HM6800 Datasheet (PDF)

 ..1. Size:559K  cn hmsemi
 hm6800.pdf pdf_icon

HM6800

HM6800 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS

 9.1. Size:744K  cn hmsemi
 hm6803.pdf pdf_icon

HM6800

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D D The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.2. Size:307K  cn hmsemi
 hm6804d.pdf pdf_icon

HM6800

HM6804D Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

 9.3. Size:612K  cn hmsemi
 hm6804.pdf pdf_icon

HM6800

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

MOSTRAR MÁS

Otros transistores... HM640 , HM6400 , HM6401 , HM6408 , HM6409 , HM6602 , HM6604 , HM6620 , IRF3205 , HM6801 , HM6803 , HM6804 , HM6804D , HM6N10 , HM6N10PR , HM6N10R , HM6N70 .

 

 
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