HM6800 - Даташиты. Аналоги. Основные параметры

HM6800Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

HM6804DDual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

HM6801 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -30V,ID = -2.5A RDS(ON)