Справочник MOSFET. HM6800

 

HM6800 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM6800
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4.8 ns
   Cossⓘ - Выходная емкость: 99 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: SOT23-6L

 Аналог (замена) для HM6800

 

 

HM6800 Datasheet (PDF)

 ..1. Size:559K  cn hmsemi
 hm6800.pdf

HM6800 HM6800

HM6800Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS

 9.1. Size:744K  cn hmsemi
 hm6803.pdf

HM6800 HM6800

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.2. Size:307K  cn hmsemi
 hm6804d.pdf

HM6800 HM6800

HM6804DDual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

 9.3. Size:612K  cn hmsemi
 hm6804.pdf

HM6800 HM6800

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

 9.4. Size:771K  cn hmsemi
 hm6801.pdf

HM6800 HM6800

HM6801 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -30V,ID = -2.5A RDS(ON)

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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