HM6800 - аналоги и даташиты транзистора

 

HM6800 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: HM6800
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.8 ns
   Cossⓘ - Выходная емкость: 99 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: SOT23-6L

 Аналог (замена) для HM6800

 

HM6800 Datasheet (PDF)

 ..1. Size:559K  cn hmsemi
 hm6800.pdf pdf_icon

HM6800

HM6800 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS

 9.1. Size:744K  cn hmsemi
 hm6803.pdf pdf_icon

HM6800

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D D The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.2. Size:307K  cn hmsemi
 hm6804d.pdf pdf_icon

HM6800

HM6804D Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

 9.3. Size:612K  cn hmsemi
 hm6804.pdf pdf_icon

HM6800

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HM640 , HM6400 , HM6401 , HM6408 , HM6409 , HM6602 , HM6604 , HM6620 , IRF3205 , HM6801 , HM6803 , HM6804 , HM6804D , HM6N10 , HM6N10PR , HM6N10R , HM6N70 .

 

 
Back to Top

 


 
.