HM6801 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM6801 Datasheet (PDF)

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HM6801 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -30V,ID = -2.5A RDS(ON)

9.1. Size:744K cn hmsemi
hm6803.pdf pdf_icon

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

9.2. Size:307K cn hmsemi
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HM6804DDual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

9.3. Size:612K cn hmsemi
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HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS