HM6801 Datasheet. Specs and Replacement
Type Designator: HM6801 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT23-6L
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HM6801 datasheet
hm6803.pdf
HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D D The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON) ... See More ⇒
hm6804d.pdf
HM6804D Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R... See More ⇒
hm6804.pdf
HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS... See More ⇒
Detailed specifications: HM6400, HM6401, HM6408, HM6409, HM6602, HM6604, HM6620, HM6800, IRF840, HM6803, HM6804, HM6804D, HM6N10, HM6N10PR, HM6N10R, HM6N70, HM6N70F
Keywords - HM6801 MOSFET specs
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