HM6804D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM6804D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 99 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: SOT23-6L

Búsqueda de reemplazo de MOSFET HM6804D

HM6804D Datasheet (PDF)

..1. Size:307K cn hmsemi
hm6804d.pdf

HM6804DDual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

8.1. Size:612K cn hmsemi
hm6804.pdf

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

9.1. Size:744K cn hmsemi
hm6803.pdf

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

9.2. Size:771K cn hmsemi
hm6801.pdf

HM6801 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -30V,ID = -2.5A RDS(ON)

9.3. Size:559K cn hmsemi
hm6800.pdf

HM6800Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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