HM6804D - Даташиты. Аналоги. Основные параметры

HM6804D Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION D D The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

HM6800 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G Battery protection or in other Switching application. S S GENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS