HM70N80 Datasheet. Equivalente

 ..1. Size:728K  cn hmsemi
 hm70n80.pdf

68VDS 25VGS 80A(ID) N-Channel Enhancement Mode MOSFET Features Pin Description VDSS=68V VGSS= 25V ID=80A RDS(ON)=10.8m (Max.)@VGS=10V Avalanche Rated Reliable and Rugged Advanced trench process technology High Density Cell Design Fo

 0.1. Size:575K  cn hmsemi
 hm70n80a.pdf

HM70N80A N-Channel Trench Power MOSFET General Description General Description General Description General Description The HM70N80A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Feat

 8.1. Size:421K  cn hmsemi
 hm70n88.pdf

N-Channel Trench Power MOSFET General Description General Description General Description General Description The is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Feature

 9.1. Size:583K  cn hmsemi
 hm70n78.pdf

HM70N78 N-Channel Trench Power MOSFET General Description General Description General Description General Description The HM70N78 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Feature

 9.2. Size:510K  cn hmsemi
 hm70n75.pdf

HM70N75 N-Channel Trench Power MOSFET General Description General Description General Description General Description The HM70N75 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Featur

 9.3. Size:397K  cn hmsemi
 hm70n20t.pdf

General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25 ) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz

 9.4. Size:675K  cn hmsemi
 hm70n90d.pdf

N-Channel Trench Power MOSFET General Description General Description General Description General Description The is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Featu

 9.5. Size:652K  cn hmsemi
 hm70n75d.pdf

HM70N75D N-Channel Trench Power MOSFET General Description General Description General Description General Description The HM70N75D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Feat

 9.6. Size:518K  cn hmsemi
 hm70n15.pdf

N-Channel Enhancement Mode Power MOSFET Description The HM70N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)