All MOSFET. HM70N80 Datasheet

 

HM70N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM70N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 145 W
   Maximum Drain-Source Voltage |Vds|: 68 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 80 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 52 nC
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 470 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0108 Ohm
   Package: TO220

 HM70N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM70N80 Datasheet (PDF)

 ..1. Size:728K  cn hmsemi
 hm70n80.pdf

HM70N80 HM70N80

68VDS25VGS80A(ID) N-Channel Enhancement Mode MOSFET Features Pin Description VDSS=68VVGSS=25VID=80A RDS(ON)=10.8m(Max.)@VGS=10V Avalanche Rated Reliable and Rugged Advanced trench process technology High Density Cell Design Fo

 0.1. Size:575K  cn hmsemi
 hm70n80a.pdf

HM70N80 HM70N80

HM70N80AN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N80A is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

 8.1. Size:421K  cn hmsemi
 hm70n88.pdf

HM70N80 HM70N80

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

 9.1. Size:583K  cn hmsemi
 hm70n78.pdf

HM70N80 HM70N80

HM70N78N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N78 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeature

 9.2. Size:510K  cn hmsemi
 hm70n75.pdf

HM70N80 HM70N80

HM70N75N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75 is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatur

 9.3. Size:397K  cn hmsemi
 hm70n20t.pdf

HM70N80 HM70N80

General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz

 9.4. Size:675K  cn hmsemi
 hm70n90d.pdf

HM70N80 HM70N80

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatu

 9.5. Size:652K  cn hmsemi
 hm70n75d.pdf

HM70N80 HM70N80

HM70N75DN-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe HM70N75D is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeat

 9.6. Size:518K  cn hmsemi
 hm70n15.pdf

HM70N80 HM70N80

N-Channel Enhancement Mode Power MOSFET Description The HM70N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =70A Schematic diagram RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top