HM740 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM740
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 139 W
   Voltaje máximo drenador - fuente |Vds|: 400 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 10.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 30 nC
   Tiempo de subida (tr): 90 nS
   Conductancia de drenaje-sustrato (Cd): 250 pF
   Resistencia entre drenaje y fuente RDS(on): 0.55 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET HM740

HM740 Datasheet (PDF)

..1. Size:310K cn hmsemi
hm740 hm740f.pdf

740 / 740F400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.5A, 400V, RDS(on) = 0.55 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche

0.1. Size:125K chenmko
chm7402wgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM7402WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.4 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.

0.2. Size:162K chenmko
chm7401wgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM7401WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

0.3. Size:67K chenmko
chm740angp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM740ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 400 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4

0.4. Size:92K chenmko
chm7400sgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM7400SGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. (SC-88 )* Super high dense cell design for extremely low RDS(ON). * High power and current handing c

0.5. Size:154K chenmko
chm7407wgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM7407WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S

0.6. Size:101K chenmko
chm7400wgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM7400WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.

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