HM740 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM740
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 139 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HM740 MOSFET
HM740 Datasheet (PDF)
hm740 hm740f.pdf

740 / 740F400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.5A, 400V, RDS(on) = 0.55 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche
chm7402wgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM7402WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.4 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.
chm7401wgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM7401WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S
chm740angp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM740ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 400 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4
Otros transistores... HM70N88 , HM70N90D , HM70P02D , HM70P03 , HM70P03K , HM70P04 , HM730 , HM730F , 2SK3568 , HM740F , HM75N06 , HM75N06K , HM75N07K , HM75N20 , HM75N75 , HM75N75K , HM75N80 .
History: AP04N60I | IXFH28N60P3 | 2SK1905 | H4946S | IRF4104PBF | H5N2008P | AON6354
History: AP04N60I | IXFH28N60P3 | 2SK1905 | H4946S | IRF4104PBF | H5N2008P | AON6354



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