HM740 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM740
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 139 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 30 nC
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET HM740
HM740 Datasheet (PDF)
hm740 hm740f.pdf
740 / 740F400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.5A, 400V, RDS(on) = 0.55 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche
chm7402wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7402WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.4 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.
chm7401wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7401WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S
chm740angp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM740ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 400 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4
chm7400sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7400SGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. (SC-88 )* Super high dense cell design for extremely low RDS(ON). * High power and current handing c
chm7407wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7407WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S
chm7400wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7400WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: NVTFS5C454NL | CS12N80F | FDS9926A | 2SJ496
History: NVTFS5C454NL | CS12N80F | FDS9926A | 2SJ496
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918