HM740 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM740
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 139 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 250 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: TO220
HM740 Datasheet (PDF)
hm740 hm740f.pdf
740 / 740F400V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.5A, 400V, RDS(on) = 0.55 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche
chm7402wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7402WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.4 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.
chm7401wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7401WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S
chm740angp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM740ANGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 400 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4
chm7400sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7400SGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. (SC-88 )* Super high dense cell design for extremely low RDS(ON). * High power and current handing c
chm7407wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7407WGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.3 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC* LCD Display inverter FEATURE0.651.30.12.00.2* Small surface mounting type. (SC-70/S
chm7400wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM7400WGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-70/SOT-323* Load Switch* DSC. * LCD Display inverter FEATURE0.651.30.12.00.20.65* Small surface mounting type.
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918