HM75N20 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:477K cn hmsemi
hm75n20.pdf pdf_icon

HM75N20 N-Channel Enhancement Mode Power MOSFET Description The HM75N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

9.1. Size:678K cn hmsemi
hm75n75.pdf pdf_icon

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 m This device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75V ID= A@

9.2. Size:569K cn hmsemi
hm75n06.pdf pdf_icon

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

9.3. Size:595K cn hmsemi
hm75n80.pdf pdf_icon

HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75V ID=80

9.4. Size:611K cn hmsemi
hm75n07k.pdf pdf_icon

HM75N07K Description The HM75N07K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =70V,ID =75A RDS(ON)

9.5. Size:519K cn hmsemi
hm75n06k.pdf pdf_icon

HM75N06K N-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

9.6. Size:500K cn hmsemi
hm75n80d.pdf pdf_icon

HM75N80D N-Channel Enhancement Mode Power MOSFET Description The HM75N80D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 75V,ID =80A Schematic diagram RDS(ON)

9.7. Size:870K cn hmsemi
hm75n75k.pdf pdf_icon

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 m This device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75V ID= A

Principales características: HM75N20

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