All MOSFET. HM75N20 Equivalents Search

 

HM75N20 Spec and Replacement


   Type Designator: HM75N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220

 HM75N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM75N20 Specs

 ..1. Size:477K  cn hmsemi
hm75n20.pdf pdf_icon

HM75N20

HM75N20 N-Channel Enhancement Mode Power MOSFET Description The HM75N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON) ... See More ⇒

 9.1. Size:678K  cn hmsemi
hm75n75.pdf pdf_icon

HM75N20

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 m This device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75V ID= A@ ... See More ⇒

 9.2. Size:569K  cn hmsemi
hm75n06.pdf pdf_icon

HM75N20

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON) ... See More ⇒

 9.3. Size:595K  cn hmsemi
hm75n80.pdf pdf_icon

HM75N20

HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75V ID=80... See More ⇒

Detailed specifications: HM70P04 , HM730 , HM730F , HM740 , HM740F , HM75N06 , HM75N06K , HM75N07K , AON7410 , HM75N75 , HM75N75K , HM75N80 , HM75N80D , HM7746K , HM7N60 , HM7N60F , HM7N60I .

History: 2SK3603-01MR

Keywords - HM75N20 MOSFET specs

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