HM80N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM80N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 460 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HM80N03 MOSFET
HM80N03 Datasheet (PDF)
hm80n03.pdf

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03i.pdf

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03ka.pdf

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
Otros transistores... HM7N60K , HM7N65 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , P0903BDG , HM80N03A , HM80N03I , HM80N03K , HM80N03KA , HM80N04 , HM80N04K , HM80N05K , HM80N06K .
History: PHD9NQ20T | FHU2N60A | LNC06R230
History: PHD9NQ20T | FHU2N60A | LNC06R230



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