HM80N03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM80N03  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO220

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HM80N03 datasheet

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HM80N03

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HM80N03

HM80N03I N-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

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HM80N03

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 0.3. Size:674K  cn hmsemi
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HM80N03

HM80N03KA N-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM7N60K, HM7N65, HM7N65F, HM7N65I, HM7N65K, HM7N80, HM7N80D, HM7N80F, 10N65, HM80N03A, HM80N03I, HM80N03K, HM80N03KA, HM80N04, HM80N04K, HM80N05K, HM80N06K