HM80N03 - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM80N03
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 460 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: TO220
Аналог (замена) для HM80N03
HM80N03 Datasheet (PDF)
hm80n03.pdf

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03i.pdf

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03ka.pdf

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
Другие MOSFET... HM7N60K , HM7N65 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , HM7N80F , RFP50N06 , HM80N03A , HM80N03I , HM80N03K , HM80N03KA , HM80N04 , HM80N04K , HM80N05K , HM80N06K .
History: FQPF5N60 | BLP039N08-D | IXTA2R4N120P
History: FQPF5N60 | BLP039N08-D | IXTA2R4N120P



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