HM8205A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM8205A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 19.5 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TSSOP-8

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HM8205A datasheet

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HM8205A

HM8205A Dual N-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

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HM8205A

HM8205 SOT-23-6LPlastic-EncapsulateMosfets HM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking HM8205XX Maximum Ra

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HM8205A

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HM8205A

Dual N-Channel Trench Power MOSFET General Description The uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features Schematic Diagram VDS = 20V,ID = A R

MOSTRAR MÁS

Otros transistores... HM80N06K, HM80N06KA, HM80N08K, HM80N15, HM80N70, HM80N80, HM80N80B, HM8205, IRF730, HM8205D, HM8205Q, HM830, HM830F, HM840, HM840F, HM85N02, HM85N02K