HM8205A Spec and Replacement
Type Designator: HM8205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 19.5 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSSOP-8
HM8205A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM8205A Specs
hm8205a.pdf
HM8205A Dual N-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(... See More ⇒
hm8205.pdf
HM8205 SOT-23-6LPlastic-EncapsulateMosfets HM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking HM8205XX Maximum Ra... See More ⇒
hm8205d.pdf
Dual N-Channel Trench Power MOSFET General Description The uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features Schematic Diagram VDS = 20V,ID = A R ... See More ⇒
Detailed specifications: HM80N06K , HM80N06KA , HM80N08K , HM80N15 , HM80N70 , HM80N80 , HM80N80B , HM8205 , 75N75 , HM8205D , HM8205Q , HM830 , HM830F , HM840 , HM840F , HM85N02 , HM85N02K .
History: HM8N20A | H5N2001LS | HFP4N90 | MTM13227 | TK7P60W5 | SI4914DY | 3205PL
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History: HM8N20A | H5N2001LS | HFP4N90 | MTM13227 | TK7P60W5 | SI4914DY | 3205PL
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