HM8205Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM8205Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 29 nC
   trⓘ - Tiempo de subida: 1000 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: DFN3X3

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HM8205Q Datasheet (PDF)

..1. Size:509K cn hmsemi
hm8205q.pdf

HM8205QN-Channel Enhancement Mode Power MOSFET Description The HM8205Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =10A Schematic diagram RDS(ON)

8.1. Size:519K cn hmsemi
hm8205.pdf

HM8205SOT-23-6LPlastic-EncapsulateMosfetsHM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking: HM8205XXMaximum Ra

8.2. Size:920K cn hmsemi
hm8205d.pdf

Dual N-Channel Trench Power MOSFETGeneral DescriptionThe uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.FeaturesSchematic Diagram VDS = 20V,ID = AR

8.3. Size:438K cn hmsemi
hm8205a.pdf

HM8205ADual N-Channel Enhancement Mode Power MOSFET D1D2Description The HM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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