HM8205Q MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: HM8205Q

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HM8205 SOT-23-6LPlastic-EncapsulateMosfets HM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking HM8205XX Maximum Ra

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Dual N-Channel Trench Power MOSFET General Description The uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features Schematic Diagram VDS = 20V,ID = A R

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HM8205A Dual N-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

Otros transistores... HM80N08K , HM80N15 , HM80N70 , HM80N80 , HM80N80B , HM8205 , HM8205A , HM8205D , IRFB31N20D , HM830 , HM830F , HM840 , HM840F , HM85N02 , HM85N02K , HM85N80 , HM85N90 .