HM8205Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM8205Q  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1000 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: DFN3X3

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HM8205Q datasheet

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HM8205Q

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 hm8205.pdf pdf_icon

HM8205Q

HM8205 SOT-23-6LPlastic-EncapsulateMosfets HM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking HM8205XX Maximum Ra

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HM8205Q

Dual N-Channel Trench Power MOSFET General Description The uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features Schematic Diagram VDS = 20V,ID = A R

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HM8205Q

HM8205A Dual N-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

MOSTRAR MÁS

Otros transistores... HM80N08K, HM80N15, HM80N70, HM80N80, HM80N80B, HM8205, HM8205A, HM8205D, IRFZ46N, HM830, HM830F, HM840, HM840F, HM85N02, HM85N02K, HM85N80, HM85N90