HM8205Q Datasheet. Specs and Replacement

Type Designator: HM8205Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1000 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN3X3

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HM8205Q substitution

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HM8205Q datasheet

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HM8205Q

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HM8205Q

HM8205 SOT-23-6LPlastic-EncapsulateMosfets HM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking HM8205XX Maximum Ra... See More ⇒

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HM8205Q

Dual N-Channel Trench Power MOSFET General Description The uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features Schematic Diagram VDS = 20V,ID = A R ... See More ⇒

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HM8205Q

HM8205A Dual N-Channel Enhancement Mode Power MOSFET D1 D2 Description The HM8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(... See More ⇒

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Detailed specifications: HM80N08K, HM80N15, HM80N70, HM80N80, HM80N80B, HM8205, HM8205A, HM8205D, IRFZ46N, HM830, HM830F, HM840, HM840F, HM85N02, HM85N02K, HM85N80, HM85N90

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