All MOSFET. HM8205Q Datasheet

 

HM8205Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM8205Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 1000 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN3X3

 HM8205Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM8205Q Datasheet (PDF)

 ..1. Size:509K  cn hmsemi
 hm8205q.pdf

HM8205Q HM8205Q

HM8205QN-Channel Enhancement Mode Power MOSFET Description The HM8205Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =10A Schematic diagram RDS(ON)

 8.1. Size:519K  cn hmsemi
 hm8205.pdf

HM8205Q HM8205Q

HM8205SOT-23-6LPlastic-EncapsulateMosfetsHM8205 Dual N-Channel Power Mosfet Features TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability 4.6. Gate Surface Mount Package 2.5. Drain Applications 1.3. Source Battery Protection Load Switch Power Management Marking: HM8205XXMaximum Ra

 8.2. Size:920K  cn hmsemi
 hm8205d.pdf

HM8205Q HM8205Q

Dual N-Channel Trench Power MOSFETGeneral DescriptionThe uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.FeaturesSchematic Diagram VDS = 20V,ID = AR

 8.3. Size:438K  cn hmsemi
 hm8205a.pdf

HM8205Q HM8205Q

HM8205ADual N-Channel Enhancement Mode Power MOSFET D1D2Description The HM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

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