HM830 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM830
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 76 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 20 nC
   Tiempo de subida (tr): 50 nS
   Conductancia de drenaje-sustrato (Cd): 80 pF
   Resistencia entre drenaje y fuente RDS(on): 1.5 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET HM830

HM830 Datasheet (PDF)

..1. Size:319K cn hmsemi
hm830 hm830f.pdf

830 / 830 500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 5.0A, 500V, RDS(on) = 1.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 20nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche t

0.1. Size:532K 1
irfhm830trpbf.pdf

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

0.2. Size:243K international rectifier
irfhm830d.pdf

PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin

0.3. Size:229K international rectifier
irfhm830pbf.pdf

PD - 97547AIRFHM830PbFHEXFET Power MOSFETVDS30 VRDS(on) max 3.8 m D 5 4 G(@VGS = 10V)D 6 3 SQg (typical)15nCD 7 2 SRG (typical)2.5 D 8 1 S3.3mm x 3.3mm PQFNID 40 A(@Tc(Bottom) = 25C)Applications Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsFeatures BenefitsLow RDSon (

0.4. Size:243K international rectifier
irfhm830dpbf.pdf

0.5. Size:532K infineon
irfhm830pbf.pdf

0.6. Size:52K chenmko
chm830gpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM830GPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 500 Volts CURRENT 4.5 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power a

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: