HM830 MOSFET. Datasheet pdf. Equivalent
Type Designator: HM830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 76 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
HM830 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM830 Datasheet (PDF)
hm830 hm830f.pdf
830 / 830 500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 5.0A, 500V, RDS(on) = 1.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 20nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche t
irfhm830trpbf.pdf
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
irfhm830d.pdf
PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin
irfhm830pbf.pdf
PD - 97547AIRFHM830PbFHEXFET Power MOSFETVDS30 VRDS(on) max 3.8 m D 5 4 G(@VGS = 10V)D 6 3 SQg (typical)15nCD 7 2 SRG (typical)2.5 D 8 1 S3.3mm x 3.3mm PQFNID 40 A(@Tc(Bottom) = 25C)Applications Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsFeatures BenefitsLow RDSon (
irfhm830dpbf.pdf
PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin
irfhm830pbf.pdf
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
chm830gpagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM830GPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 500 Volts CURRENT 4.5 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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