HM830 Datasheet. Specs and Replacement
Type Designator: HM830 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 76 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
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HM830 substitution
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HM830 datasheet
hm830 hm830f.pdf
830 / 830 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 5.0A, 500V, RDS(on) = 1.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 20nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche t... See More ⇒
irfhm830trpbf.pdf
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (... See More ⇒
irfhm830d.pdf
PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin... See More ⇒
irfhm830pbf.pdf
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (... See More ⇒
Detailed specifications: HM80N15, HM80N70, HM80N80, HM80N80B, HM8205, HM8205A, HM8205D, HM8205Q, 2N60, HM830F, HM840, HM840F, HM85N02, HM85N02K, HM85N80, HM85N90, HM85N95D
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