HM85N02 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: HM85N02

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HM85N02 Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

0.1. Size:699K cn hmsemi
hm85n02k.pdf pdf_icon

HM K Description The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

9.1. Size:606K cn hmsemi
hm85n95d.pdf pdf_icon

HM85N95D N-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

9.2. Size:539K cn hmsemi
hm85n90.pdf pdf_icon

HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)